Three-Terminal Probe Reconfigurable Phase-Change Material Switches

We present the realization of a novel three-terminal electronic switch using phase-change (PC) chalcogenide material. This device subdivides a single PC switch into a parallel array of three-terminal subvias which are addressed with atomic-force-microscopy cantilever probes. This subdivision reduces the required switching current to acceptable levels. Vias of Ge(50)Sb(50) are demonstrated in this switch topology and are switched between high-and low-resistance states. The vias show an OFF/ON resistance ratio of approximately 100x, which can be applied in radio-frequency switching applications. This dynamic range is 10x less than that observed in sheet films of this material, with the main loss being a reduction in resistivity between the sheet-film OFF-state and the device OFF-state. The device OFF-state resistivity is similar in the as-fabricated state and the reamorphized state.