期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 57, 期 10, 页码 2434-2439出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2056151
关键词
Intrinsic gain; polysilicon; Schottky barrier; source-gated transistor (SGT); TFT; voltage gain
资金
- EPSRC DTA [EP/P503982/1]
Thin-film self-aligned source-gated transistors (SGTs) have been made in polysilicon. The very high output impedance of this type of transistor makes it suited to analog circuits. Intrinsic voltage gains of greater than 1000 have been measured at particular drain voltages. The drain voltage dependence of the gain is explained based on the device physics of the SGT and the fact that a pinchoff occurs at both the source and the drain. The results obtained from these devices, which are far from optimal, suggest that, with a proper design, the SGT is well suited to a wide range of analog applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据