期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 56, 期 2, 页码 214-221出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.2011678
关键词
CMOS image sensor; fluorescence lifetime imaging; time-resolved image; two charge transfer stages
资金
- Ministry of Education, Culture, Sports, Science and Technology
A CMOS image sensor for time-resolved fluorescence lifetime imaging with subnanosecond time resolution is presented. In order to analyze the fluorescence lifetime, the proposed CMOS image sensor has two charge transfer stages using a pinned photodiode structure in which the first charge transfer stage is for the time-resolved sifting of fluorescence in all the pixels simultaneously and the second charge transfer stage is for reading the signals in each pixel sequentially with correlated double sampling operation. A 0.18-mu m CMOS image sensor technology with a pinned photodiode process option is used for the implementation of a 256 x 256 CMOS image sensor. The decaying images and lifetimes of fura-2 solutions having different concentrations are successfully measured with a 250-ps time step using the CMOS image sensor and ultraviolet laser diode as a light source.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据