期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 56, 期 12, 页码 2979-2986出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2033419
关键词
Analytical model; band-to-band tunneling; field-effect transistors (FETs); graphene bilayer
资金
- EC Seventh Framework Program through Project GRAND [215752]
- Network of Excellence NANOSIL [216171]
Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space in order to design a device structure with promising performance in terms of transistor operation. Our model, based on the effective mass approximation and ballistic transport assumptions, takes into account bilayer-graphene tunable gap and self-polarization and includes all band-to-band tunneling current components, which are shown to represent the major limitation to transistor operation, because the achievable energy gap is not sufficient to obtain a large I-on/I-off ratio.
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