期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 56, 期 8, 页码 1712-1720出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2024046
关键词
Nonvolatile memories; resistive-switching memory (RRAM); transition metal oxide
资金
- European Union through the Emerging Materials for Mass-storage Architectures Project [FP6-033751]
Resistive-switching memory (RRAM) devices are attracting a considerable interest in view of their back-end integration, fast programming, and high scalability. Prediction of the programming voltages and currents as a function of the operating conditions is an essential task for developing compact and numerical models able to handle a large number (10(6)-10(9)) of cells within an array. Based on recent experimental findings on the set and reset processes, we have developed physics-based analytical models for the set and reset operations in NiO-based RRAMs. Simulation results obtained by the analytical models were compared with experimental data for variable pulse conditions and were found consistent with data. The set transition is described by a threshold switching process at the broken conductive filament (CF), while the reset transition is viewed as a thermally driven dissolution and/or oxidation of the CF. Set and reset models are finally used for reliability predictions of failure times under constant-voltage stress (read disturb) and elevated-temperature bake (data retention).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据