期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 56, 期 9, 页码 2160-2164出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2026393
关键词
Richardson constant; Schottky barriers; Schottky diodes; zinc compounds; zinc oxide
资金
- Marsden Fund [UOC0604]
- MacDiarmid Institute for Advanced Materials and Nanotechnology
The current-voltage characteristics of low-ideality-factor (1.09 at 300 K) ZnO Schottky diodes were investigated over the temperature range of 40-423 K. Planar geometry devices were fabricated on the Zn-polar face of a low carrier concentration (n = 1 x 10(14) cm(-3)) hydrothermally grown bulk ZnO single crystal wafer. The current transport was dominated by thermionic emission between 293 and 423 K, provided the ZnO surface was exposed to air. The nearly ideal characteristics of the diodes yielded an experimental Richardson constant of 10 +/- 6 A . cm(-2) . K-2, close to the theoretical value of 32 A . cm(-2) . K-2, and two orders of magnitude larger than previously reported values.
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