期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 55, 期 9, 页码 2314-2323出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.928021
关键词
defect; device simulation; graphene field-effect transistor; graphene nanoribbon; impurity; nonequilibrium Green's function (NEGF); quantum transport
We present an atomistic 3-D simulation study of the performance of graphene-nanoribbon (GNR) Schottky-barrier field-effect transistors (SBFETs) and transistors with doped reservoirs (MOSFETs) by means of the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green's function (NEGF) formalism. Ideal MOSFETs show slightly better electrical performance for both digital and terahertz applications. The impact of nonidealities on device performance has been investigated, taking into account the presence of single vacancy, edge roughness, and ionized impurities along the channel. In general, MOSFETs show more robust characteristics than SBFETs. Edge roughness and single-vacancy defect largely affect the performance of both device types.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据