期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 55, 期 8, 页码 2078-2085出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.926593
关键词
carbon devices; carbon transistors; epitaxial graphene; graphene; graphene devices; graphene transistors; HfO2 dielectric; high-k dielectric; high mobility; semimetal; SiC; thin-film transistors
This paper describes the behavior of top-gated transistors fabricated using carbon, specifically epitaxial graphene on SiC, as the active material. Although graphene devices have been built before, in this paper, we provide the first demonstration and systematic evaluation of arrays of a large number of transistors produced using standard microelectronics methods. The graphene devices presented feature high-k dielectric, mobilities up to 5000 cm(2)/V center dot s, and I-on/I-off ratios of up to seven, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micrometer-scale devices have negligible band gaps and, therefore, large leakage currents.
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