期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 55, 期 11, 页码 3167-3174出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.2004650
关键词
Breakdown; CMOS; device reliability; dielectric breakdown; dielectrics; hot-carrier degradation; negative-bias temperature instability (NBTI); reliability; RF; RF CMOS
资金
- Dutch Technology Foundation STW
We report on the degradation of MOS transistors under RF stress. Hot-carrier degradation, negative-bias temperature instability, and gate dielectric breakdown are investigated. The findings are compared to established voltage- and field-driven models. The experimental results indicate that the existing models are well applicable into the gigahertz range to describe the degradation of MOS transistors in an RF circuit. The probability of gate dielectric breakdown appears to reduce rapidly at such high stress frequencies, increasing the design margin for RF power circuits.
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