期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 55, 期 9, 页码 2469-2474出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.927946
关键词
CMOS devices; equivalent oxide thickness (EOT); flatband voltage; HfC; high-kappa dielectric; metal carbide; metal gate; MOS capacitor; TaC; work function (WF)
Various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs). It is found that TaC and HfC are more suitable for the CMOS device application among the various metal carbides. HfC is demonstrated to be a good candidate for NMOS because of its low WF and excellent thermal stability, while TaC + Al shows a high WF and good thermal stability suitable for PMOS device application. In addition, HfC and TaC have a wide range of WF tunability using thin LaN and AlN interlayer or introduction of La and Al into the metal carbides.
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