期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 55, 期 1, 页码 466-470出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2007.910573
关键词
power converter; power density figure of merit (PDFOM); semiconductor power device
In order to help device selection and optimal application in high-power-density converter designs, a new power semiconductor device figure of merit (FOM)-power density FOM-is proposed, with consideration of power device conduction and switching losses, thermal characteristics, and package. The FOM is derived based on the device theory, and its validity and usefulness are demonstrated with a practical design example.
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