期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 55, 期 10, 页码 2623-2631出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.2003096
关键词
Analytical potential distribution; corner effect; short-channel effects (SCEs); silicon trigate (TG) MOSFETs
资金
- Greek General Secreteriat for Research and Technology
A simple analytical expression of the 3-D potential distribution along the channel of lightly doped silicon trigate MOSFETs in weak inversion is derived, based on a perimeter-weighted approach of symmetric and asymmetric double-gate MOSFETs. The analytical solution is compared with the numerical solution of the 3-D Poisson's equation in the cases where the ratios of channel length/silicon thickness and channel length/channel width are >= 2. Good agreement is achieved at different positions within the channel. The perimeter-weighted approach fails at the corner regions of the silicon body; however, by using corner rounding and undoped channel to avoid corner effects in simulations, the agreement between model and simulation results is improved. By using the extra potential induced in the silicon film due to short-channel effects, the subthreshold drain current is determined in a semianalytical way, from which the subthreshold slope, the drain-induced barrier lowering, and the threshold voltage are extracted.
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