4.6 Article

Modeling thermal effects in nanodevices

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 55, 期 6, 页码 1306-1316

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.921263

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acoustic and optical phonons; Boltzmann transport equation (BTE); nanodevices; particle-based device simulations; scaling; thermal effects

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In order to investigate the role of self-heating effects on the electrical characteristics of nanoscale devices, we implemented a 2-D Monte Carlo device simulator that includes the self-consistent solution of the energy balance equations for both acoustic and optical phonons. The acoustic and optical phonon temperatures are fed back into the electron transport solver through temperature-dependent scattering tables. The electrothermal device simulator was used in the study of different generations of nanoscale fully depleted silicon-on-insulator devices that are either already in production or will be fabricated in the next five to ten years. We find less degradation due to self-heating in very short channel device structures due to the increasing role of nonstationary velocity-overshoot effects which are less sensitive to the local temperature.

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