期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 55, 期 11, 页码 2968-2976出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.2005164
关键词
Effective mobility; nonequilibrium Green's functions (NEGFs); quasi-ballistic transport; silicon nanowire (Si-NW); surface roughness (SR)
资金
- EU Marie-Curie Action EDITH [MEST-CT-2004-504195]
- PNANO 2007 program of the Agence Nationale de la Recherche (QUANTAMONDE)
Lateral size effects on surface-roughness-limited mobility in silicon-nanowire FETs are analyzed by means of a full-quantum 3-D self-consistent simulation. A statistical analysis Is carried out by considering different realizations of the potential roughness at the Si-SiO2 interfaces. Nanowires with lateral section varying from 3 x 3 to 7 x 7 nm(2) are considered. Effective mobility is computed by evaluating the electron density in a reduced channel region to eliminate parasitic effects from contacts. It is found that transport in wires with the smallest section is dominated by scattering due to potential fluctuations, resulting in a larger standard deviation of the effective mobility, whereas it is dominated by transverse-mode coupling in wires with larger section, resulting in a stronger influence of surface roughness at high gate voltages.
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