期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 55, 期 11, 页码 3246-3250出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.2004646
关键词
Bulk silicon; double gate; FinFET; MOS; short-channel effect
资金
- Samsung
- National Natural Science Foundation of China [60625403]
- 973 Projects [2006CB302701]
- New Century Excellent Talents in University Program
A new body-on-insulator (BOI) FinFET device structure based on bulk-Si substrate has been proposed and experimentally demonstrated in this paper. In comparison with other bulk FinFETs, the BOI FinFET features the localized insulator below the Si-Fin body, which can achieve both low source/drain (S/D) parasitic resistance and effective suppression of the S/D leakage beneath the Si-Fin channel, as well as good heat dissipation capability. The device fabrication process is basically compatible with conventional CMOS technology. High drive current, low subthreshold swing, and excellent short-channel behavior are observed in the fabricated BOI FinFETs.
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