期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 55, 期 9, 页码 2397-2402出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.927384
关键词
backscattering; elastic and inelastic scattering; nanoscale MOSFETs; quantum-corrected Monte Carlo simulation; quasi-ballistic transport; source-end velocity
In this paper, we study the influence of elastic and inelastic phonon scattering on the drive current of Si MOSFETs under quasi-ballistic transport. Inelastic phonon emission involving energy relaxation helps achieve ballistic current, even in the presence of scattering, if the channel length is scaled down to the 10-nm scale. This result agrees with Natori's previous predictions. However, for longer channel devices, inelastic phonon emission degrades the drain current due to space charge effects caused by charge accumulation. We also demonstrate that source-end potential engineering to electrically reduce the bottleneck barrier length can result in a ballistic current even in longer channel devices.
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