4.3 Article

Analysis of the Switching Variability in Ni/HfO2-Based RRAM Devices

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Applied

Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode

Kuan-Liang Lin et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2013)

Article Physics, Applied

Intrinsic nanofilamentation in resistive switching

Xing Wu et al.

JOURNAL OF APPLIED PHYSICS (2013)

Article Physics, Applied

An in-depth simulation study of thermal reset transitions in resistive switching memories

M. A. Villena et al.

JOURNAL OF APPLIED PHYSICS (2013)

Article Engineering, Electrical & Electronic

Improved Switching Variability and Stability by Activating a Single Conductive Filament

Jubong Park et al.

IEEE ELECTRON DEVICE LETTERS (2012)

Article Physics, Applied

Analysis and modeling of resistive switching statistics

Shibing Long et al.

JOURNAL OF APPLIED PHYSICS (2012)

Article Engineering, Electrical & Electronic

Filamentation Mechanism of Resistive Switching in Fully Silicided High-κ Gate Stacks

Nagarajan Raghavan et al.

IEEE ELECTRON DEVICE LETTERS (2011)

Article Engineering, Electrical & Electronic

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

Daniele Ielmini et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)

Article Physics, Applied

Electrode dependence of filament formation in HfO2 resistive-switching memory

Kuan-Liang Lin et al.

JOURNAL OF APPLIED PHYSICS (2011)

Article Engineering, Electrical & Electronic

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

Daniele Ielmini et al.

IEEE ELECTRON DEVICE LETTERS (2010)

Article Physics, Applied

Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device

Qi Liu et al.

APPLIED PHYSICS LETTERS (2009)

Article Engineering, Electrical & Electronic

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

Ugo Russo et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)

Article Engineering, Electrical & Electronic

Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

A. Crespo-Yepes et al.

MICROELECTRONICS RELIABILITY (2009)

Article Materials Science, Multidisciplinary

Random and localized resistive switching observation in Pt/NiO/Pt

Jung-Bin Yun et al.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2007)

Review Chemistry, Physical

Nanoionics-based resistive switching memories

RaineR Waser et al.

NATURE MATERIALS (2007)