期刊
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
卷 14, 期 2, 页码 769-771出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2014.2311231
关键词
Conductive filament (CF); HfO2; Ni; resistive random access memory (RRAM); unipolar switching; variability
资金
- Spanish Ministry of Economy and Competitiveness [TEC2011-27292-C02-02]
- CSIC
- European Social Fund (ESF) under a JAE-DOC
- AGAUR of the Generalitat de Catalunya [2009SGR228]
In this letter, we focus on the cycle-to-cycle variability of the low resistive state in Ni/HfO2-based resistive switching structures. The results show that several discrete current levels can individually last hundreds of cycles. They are a result of the random nature of the reversible conductive path formation through percolation processes, which could be attributed to a different shape, size, or number of conductive filaments. After successive cycles, the same or new filaments will nucleate in the weaker zones of the dielectric. In addition, the switching voltages related to the creation and dissolution of localized conductive paths are found to be statistically associated.
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