Hot Carrier Injection Stress Effect on a 65 nm LNA at 70 GHz

The hot carrier injection stress effect on a 65 nm low-noise amplifier at the 70 GHz range of operation has been studied. The experimental data show that the minimum noise figure increases (similar to 2 dB) and the maximum small-signal power gain decreases (similar to 3 dB) after 10 h of HCI overstress due to transconductance degradation as evidenced by 65 nm individual transistor measurement.