期刊
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
卷 14, 期 3, 页码 931-934出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2014.2328496
关键词
Hot electron; low noise amplifier; noise figure; radio frequency; small-signal power gain
The hot carrier injection stress effect on a 65 nm low-noise amplifier at the 70 GHz range of operation has been studied. The experimental data show that the minimum noise figure increases (similar to 2 dB) and the maximum small-signal power gain decreases (similar to 3 dB) after 10 h of HCI overstress due to transconductance degradation as evidenced by 65 nm individual transistor measurement.
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