期刊
IEEE TRANSACTIONS ON COMPUTERS
卷 63, 期 5, 页码 1157-1168出版社
IEEE COMPUTER SOC
DOI: 10.1109/TC.2012.292
关键词
Phase-change memory; wear-leveling; endurance; security; lifetime; write overhead
资金
- National Basic Research Program of China [2012AA012600]
- National Science Foundation of China [60973143]
Phase-change memory (PCM) is a promising alternative of DRAM. Nonetheless, it has a well-known problem that is the limited number of writes to storage cells. Thus, wear-leveling, which makes the writes uniform, is crucial to boost PCM's lifetime. This paper proposes multi-way wear leveling (MWWL) to increase both endurance and security of PCM. MWWL can efficiently distribute writes to physical addresses uniformly from a multiple of ways while incurring little write overhead and almost no extra hardware overhead. More important, MWWL is a fundamental scheme that can be applied to existing leveling algorithms. As a case study, we extended a state-of-the-art technique, Security Refresh, to its multi-way version, Multi-Way Security Refresh (MWSR). The experimental results show that MWSR can achieve the same or better lifetime than that of the original two-level Security Refresh but with much less write overhead (from 11.7% down to 1.5%).
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