期刊
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
卷 32, 期 8, 页码 1201-1214出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCAD.2013.2252057
关键词
Device; memristor; model; SPICE; variation
类别
资金
- NSF CAREER [CCF-1053149]
This paper presents a SPICE model for memristive devices. It builds on existing models and is correlated against several published device characterization data with an average error of 6.04%. When compared to existing alternatives, the proposed model can more accurately simulate a wide range of published memristors. The model is also tested in large circuits with up to 256 memristors, and was less likely to cause convergence errors when compared to other models. We show that the model can be used to study the impact of memristive device variation within a circuit. We examine the impact of nonuniformity in device state variable dynamics and conductivity on individual memristors as well as a four memristor read/write circuit. These studies show that the model can be used to predict how variation in a memristor wafer may impact circuit performance.
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