期刊
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
卷 65, 期 10, 页码 1425-1429出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2018.2857626
关键词
Voltage reference; CMOS technology; nano-power applications; subthreshold circuit; temperature compensation
资金
- STMicroelectronics
- University of Catania
This brief presents a fully CMOS voltage reference based on a self-biased topology, which provides low current consumption while saving silicon area. Temperature compensation is achieved by means of a subthreshold triode-based Widlar current reference and a proper arrangement of an active load. The proposed voltage reference was fabricated in a standard 0.13-mu m CMOS technology and occupies a core area as low as 0.003 mm(2). The circuit properly operates with a power supply ranging from 2.4 V to 1.1 V while providing a reference voltage of around 800 mV with an average temperature coefficient of 100 ppm/degrees C and an overall current consumption below 25 nA. This performance makes the proposed voltage reference very suitable for RF-powered applications.
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