期刊
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
卷 60, 期 10, 页码 682-686出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2013.2273837
关键词
Duplication; memory wall; memristor; nanocrossbar memory; stateful logic
资金
- National Science Foundation of China [60921062, 61003082]
This brief proposes a circuit structure that performs a stateful logic operation on memristor memory based on a nanocrossbar. Through analysis and comparison of multiple schemes, achievable circuit condition is demonstrated, and the feasibility of the duplication operation is proved. The proposed circuit structure provides the memory with the function of in situ logic operation and thus can potentially reduce the amount of memory accessing actions and provide a possible solution to the memory wall problem.
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