期刊
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
卷 61, 期 7, 页码 1994-2001出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSI.2014.2304658
关键词
Critical charge; radiation hardened memory; reliability; single event upsets (SEUs); soft errors
资金
- Harbin science and innovation research special fund [2012RFXXG042]
In this paper, a novel low-power and highly reliable radiation hardened memory cell (RHM-12T) using 12 transistors is proposed to provide enough immunity against single event upset in TSMC 65 nm CMOS technology. The obtained results show that the proposed cell can not only tolerate upset at its any sensitive node regardless of upset polarity and strength, but also recover from multiple-node upset induced by charge sharing on the fixed nodes independent of the stored value. Moreover, the proposed cell has comparable or lower overheads in terms of static power, area and access time compared with previous radiation hardened memory cells.
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