期刊
IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS
卷 8, 期 3, 页码 334-344出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TBCAS.2013.2270177
关键词
Active rectifier; implantable microelectronic device; inductive coupling; peaking current source; switched-offset biasing; wireless power transfer
A full-wave active rectifier switching at 13.56 MHz with compensated bias current for a wide input range for wirelessly powered high-current biomedical implants is presented. The four diodes of a conventional passive rectifier are replaced by two cross-coupled PMOS transistors and two comparator-controlled NMOS switches to eliminate diode voltage drops such that high voltage conversion ratio and power conversion efficiency could be achieved even at low AC input amplitude vertical bar V-AC vertical bar. The comparators are implemented with switched-offset biasing to compensate for the delays of active diodes and to eliminate multiple pulsing and reverse current. The proposed rectifier uses a modified CMOS peaking current source with bias current that is quasi-inversely proportional to the supply voltage to better control the reverse current over a wide AC input range (1.5 to 4 V). The rectifier was fabricated in a standard 0.35 mu m CMOS N-well process with active area of 0.0651 mm(2). For the proposed rectifier measured at vertical bar V-AC vertical bar = 3.0 V, the voltage conversion ratios are 0.89 and 0.93 for R-L = 500 Omega and 5 k Omega, respectively, and the measured power conversion efficiencies are 82.2% to 90.1% with vertical bar V-AC vertical bar ranges from 1.5 to 4 V for R-L = 500 Omega.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据