期刊
IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION
卷 57, 期 10, 页码 2853-2861出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TAP.2009.2031758
关键词
Dipole-based antenna; GaAs; millimeter-wave (MMW) antenna; on-chip antenna; pseudomorphic high electron-mobility transistor (pHEMT); V-band; wireless personal area network (WPAN)
资金
- National Science Council [NSC 96-2628-E-008-001-MY3]
A V-band on-chip dipole-based antenna for 60 GHz wireless personal area network (WPAN) application is implemented using WIN 0.15 mu m pHEMT process. The fabricated antenna has a compact size of 0.9 mm(2), including test pads. The antenna comprises a half-wavelength dipole element and two tilted and slotted dipole elements to realize a wider impedance bandwidth than conventional wire dipole antennas, and provides endfire radiation patterns with high front-to-back ratio. The antenna performance is characterized using S-parameter, two-antenna (identical), three-antenna, and radiation pattern measurement methods for return loss, transmission gain, absolute gain, and radiation patterns. Measurement results shows that the on-chip antenna achieves a VSWR = 2 fractional bandwidth of 24% (55 to 70 GHz), a transmission gain of -32 dB (the separated distance R = 5 cm), an absolute gain of 3.6 dBi, a front-to-back ratio of 12 dB, and an half-power beamwidth of 60 degrees in E-plane and H-plane. The measured and simulated results are shown in good agreements.
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