4.7 Article

Packageless AlN/ZnO/Si Structure for SAW Devices Applications

期刊

IEEE SENSORS JOURNAL
卷 13, 期 2, 页码 487-491

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2012.2219692

关键词

AlN; finite element method (FEM); packageless structure; surface acoustic wave (SAW); ZnO

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The possibility to perform a packageless structure for acoustic wave sensors applications based on AlN/interdigital transducer/ZnO/Si structure was investigated. The effect of thicknesses of AlN and ZnO thin films on structure performance was simulated by 2-D finite element method. Theoretical predictions were confirmed by in-situ measurements of frequency, insertion loss, and thickness during deposition of AlN layer on ZnO/Si.

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