期刊
IEEE SENSORS JOURNAL
卷 13, 期 8, 页码 2823-2827出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2013.2253767
关键词
2-D electron gas; aluminum gallium nitride; gas detectors; nitrogen dioxide
Low-ppb room temperature NO2 detection is demonstrated using recessed AlGaN/GaN heterostructures fabricated on silicon substrates. We employ the 2-D electron gas (2DEG) formed at the interface of the AlGaN/GaN heterostructure for the monitoring of low-ppb NO2 concentrations. The dynamic range of these 2DEG structures can be tuned to that of interest for air quality monitoring (0-100 ppb) by recessing of the open gate areas. We find that in the presence of humidity, the interaction of NO2 with the open gate area reversibly changes 2DEG conductivity. A slope-based detection scheme in combination with periodic heating-induced gas desorption enables continuous air quality (NO2) monitoring.
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