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Post-CMOS and Post-MEMS Compatible Flexible Skin Technologies: A Review

期刊

IEEE SENSORS JOURNAL
卷 13, 期 10, 页码 3962-3975

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2013.2262375

关键词

Flexible electronics; sensor arrays; silicon on insulator technology; wearable sensors

资金

  1. National Science Foundation [0501314, 0747620, 1028564]
  2. Directorate For Engineering
  3. Div Of Electrical, Commun & Cyber Sys [0747620] Funding Source: National Science Foundation
  4. Div Of Electrical, Commun & Cyber Sys
  5. Directorate For Engineering [0501314] Funding Source: National Science Foundation

向作者/读者索取更多资源

This paper reviews flexible skin technologies that enable monolithic integration of silicon CMOS circuits and high temperature MEMS devices on flexible substrates. The monolithic integration is achieved by fabricating CMOS circuits or MEMS sensors on silicon wafers first and then forming flexible skins by post-processing. In this sense, these flexible skin technologies are termed as post-CMOS and -MEMS compatible. Most flexible devices developed using these technologies share a common structure-silicon islands connected by flexible cables. Representative works in this field are reviewed. Important aspects such as materials, releasing methods, and interconnection methods are discussed. A brief comparison of post-CMOS and -MEMS compatible flexible skin technologies with other technologies is presented.

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