期刊
IEEE SENSORS JOURNAL
卷 13, 期 1, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2012.2224334
关键词
AlGaN/GaN heterostructure; THz hot electron bolometer; 2-D electron gas (2-DEG)
资金
- National Science Foundation's DMR program [0907126]
- National Aeronautics and Space Administration (NASA) SBIR [NNX12CE53P]
- NASA
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0907126] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1106444] Funding Source: National Science Foundation
We present the results on design, fabrication, and characterization of a hot-electron bolometer based on low-mobility 2-D electron gas (2-DEG) in an AlGaN/GaN heterostructure. The characterization of our hot-electron bolometers demonstrates that the following can be achieved simultaneously: 1) strong coupling to incident THz radiation due to strong Drude absorption; 2) significant THz heating of 2-DEG due to the small value of the electron heat capacity; and 3) high responsivity due to the strong temperature dependence of 2-DEG resistance. Low contact resistance achieved in our devices ensures that THz radiation couples primarily to the 2-DEG. Due to a small electron momentum relaxation time, the real part of the 2-DEG sensor impedance is similar to 50-100 Omega, which provides good impedance matching between sensors and antennas. The room temperature responsivity of our devices reaches similar to 0.04 A/W at 2.55 THz along with a noise equivalent power of similar to 5 nW/Hz(1/2).
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