期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 24, 期 24, 页码 2218-2220出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2012.2225421
关键词
Internal quantum efficiency; light-emitting diodes (LEDs); superlattice
资金
- National Natural Science Foundation of China [61176043]
- Special Funds for Provincial Strategic and Emerging Industries LED Industry Projects of China [2010A081002005]
The blue InGaN light-emitting diodes (LEDs) with specific designs of p-InGaN/GaN superlattice (SL) last quantum barrier are investigated numerically and experimentally. The proposed SL with a graded indium mole fraction from 0% to 5% shows improved efficiency droop and superior optical characteristics in comparison with the conventional LEDs. As indicated by the simulation results, the promotion of hole injection and the reduction of electron leakage play important roles in these improvements. Fabricated LEDs with this specific design exhibit stronger emission intensity, smaller forward voltage, and larger light output power compared to its counterparts.
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