期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 24, 期 23, 页码 2191-2194出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2012.2225420
关键词
GaAsBi; molecular beam epitaxy (MBE); p-i-n photodiodes; responsivity
资金
- UK Technology Strategy Board
- EPSRC [EP/H005587/1]
- E-Futures Doctoral Training Centre
- UKRC Energy Programme
- UK EPSRC - University of Sheffield Doctoral Fellowship
- Royal Society (University Research Fellowship)
- EPSRC [EP/H005587/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H005587/1] Funding Source: researchfish
The absorption properties of a series of GaAs1-xBix layers with similar to 6% Bi have been systematically investigated by measuring photocurrent spectra in p-i-n diode structures grown by molecular beam epitaxy. The GaAs1-xBix layers varied in thickness from 50 to 350 nm and showed a photoresponse in the near-infrared up to almost 1.3 mu m. The absorption coefficients of the layers were obtained from the responsivity data. Below the band gap, the absorption coefficients showed an exponential dependence on the photon energy (Urbach tailing).
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