期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 23, 期 20, 页码 1430-1432出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2011.2162724
关键词
Ge/SiGe; integrated optoelectronics; multiple quantum wells; silicon photonics
资金
- Conseil General de l'Essonne
- Cariplo Foundation
The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodetector. At -3 V, 10 Gb/s operation is demonstrated at wavelengths of 1405 and 1420 nm with a responsivity as high as 0.8 A/W. The device, 3 mu m wide and 80 mu m long, exhibits a dark current of 474 nA at a reverse bias of -1 V. These results pave the way for the use of Ge/SiGe multiple quantum-well structures as efficient active waveguide devices in silicon compatible integrated circuits.
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