期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 23, 期 23, 页码 1751-1753出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2011.2169052
关键词
Electroluminescence; germanium; GeSn; light-emitting diode (LED); Si photonics
资金
- Deutsche Forschungsgemeinschaft (German Research Foundation) [SCHU 2496/4]
In this letter, a GeSn light-emitting pin diode integrated on Si via a Ge buffer is demonstrated and it is compared with a light-emitting pin diode made from pure, unstrained Ge on Si. The diode layer structures are grown with a special low-temperature molecular beam epitaxy process. The pseudomorphic GeSn layers (1.1% Sn content) on the Ge buffer are compressively strained. Both light-emitting pin diodes clearly show direct bandgap electroluminescence emission at room temperature. The electroluminescence peak of the GeSn light-emitting pin diode is shifted by 20 meV into the infrared region compared to the electroluminescence peak of the unstrained Ge light-emitting pin diode. The shift is due to the lower bandgap of GeSn and the influence of strain.
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