期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 23, 期 2, 页码 76-78出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2010.2091119
关键词
InGaN; internal quantum efficiency; light-emitting diodes (LEDs); multiquantum well
资金
- National Science Council of Taiwan [NSC 96-2112-M-018-007-MY3]
This letter demonstrates the outcomes of numerical investigation of the InGaN light-emitting diodes with varied barrier thicknesses. Compared with the original structure with equal barrier thickness, the analyses focus on hole injection efficiency, carrier distribution, electron leakage, and radiative recombination. Simulation approach yields to a result that, when varied barrier thicknesses are used, more than one quantum well contributes to radiative recombination at high injection current which leads to the improvement of efficiency droop. Further analysis indicates that the thinner barrier located close to the p-side layers is beneficial for increasing hole injection, which leads to the reduction of electron leakage; moreover, holes can be confined in more quantum wells in such condition as well.
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