期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 22, 期 18, 页码 1346-1348出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2010.2056360
关键词
Bandwidth; GaN; micro light-emitting diodes (micro-LEDs); modulation; polymer optical fiber (POF); white light-emitting diode (LED)
资金
- EPSRC
- EPSRC [EP/E006000/1, EP/F05999X/1, EP/D078555/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/F05999X/1, EP/E006000/1, EP/D078555/1] Funding Source: researchfish
The high-frequency modulation of individual pixels in III-nitride-based micro-pixel light-emitting diode arrays, where each array consists of 16 x 16 individually addressable 72-mu m-diameter pixels, are reported. The devices investigated have peak emission wavelengths at 370, 405, and 450 nm, respectively. The optical -3-dB modulation bandwidth of a typical pixel from the 450-nm-emitting device was found to be approximately 245 MHz. Data transmission at rates of up to 1 Gb/s is demonstrated from a single pixel emitting at 450 nm, using on-off keying nonreturn-to-zero modulation, with a bit-error ratio of less than 1x10(-10). Such devices have potential for free-space or fiber-coupled visible light communications.
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