期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 21, 期 9-12, 页码 805-807出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2009.2018472
关键词
Complementary metal-oxide-semiconductor (CMOS) image sensor; micropolarizer array; polarization imaging
资金
- Research Grant Council of Hong Kong SAR, China [GRF610608, CERG612208]
We fabricated and characterized a thin photo-patterned micropolarizer array for complementary metal-oxide-semiconductor (CMOS) image sensors. The proposed micropolarizer fabrication technology completely removes the need for complex selective etching. Instead, it uses the well-controlled process of ultraviolet photolithography to define micropolarizer orientation patterns on a spin-coated azo-dye-1 film. The patterned polymer film micropolarizer (10 mu m x 10 mu m) exhibits submicron thickness (0.3 mu m) and has an extinction ratio of similar to 100. Reported experimental results validate the concept of a thin, high spatial resolution, low-cost photo-patterned micropolarizer array for CMOS image sensors.
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