期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 21, 期 13, 页码 866-868出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2009.2019625
关键词
Avalanche photodiodes (APDs); impact ionization
Measurements of the avalanche multiplication noise in InAs p-i-n and n-i-p diodes at room temperature demonstrate unambiguously that the avalanche multiplication process is dominated by impact ionization of electrons. This results in the excess noise factor for electron initiated multiplication asymptotically approaching a maximum value just less than two and becoming virtually gain-independent for higher gains. Measurements for predominantly hole initiated multiplication show corresponding high excess noise factors suggesting the electron to hole ionization coefficient ratios are comparable to those reported for Hg(1-x)Cd(x)Te electron avalanche photodiodes.
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