期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 21, 期 13, 页码 905-907出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2009.2020299
关键词
Arrayed waveguide grating (AWG); integrated optoelectronics; semiconductor lasers; tunable lasers
资金
- European Network of Excellence ePIXnet
- Dutch Ministry of Economic Affairs through the NRC Photonics
A novel concept for an arrayed-waveguide-grating (AWG)-based fast tunable laser is presented. It is fabricated in the InP-InGaAsP monolithic integration technology. Laser peaks have a sidemode suppression ratio of 30-40 dB. The wavelength switching speed is in the order of a few nanoseconds and switching is achieved by a 1-mA bias current. The switching between AWG channels is discrete and no laser operation takes place at wavelengths corresponding to other channels during the tuning process.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据