10-Gb/s Direct Modulation up to 100 °C Using 1.3-μm-Range Metamorphically Grown Strain Compensated InGaAs-GaAs MQW Laser on GaAs Substrate

We have realized 10-Gb/s direct modulation up to 100 degrees C using a metamorphic InGaAs multiple-qunatum well (MQW) laser on a GaAs substrate. The highly strained InGaAs quantum well (QW) and strain-compensated GaAs barrier layer allowed 1.3-mu m-range lasing and an increased number of QWs (six). This laser with a 200-mu m-long short cavity and a narrow ridge had maximum relaxation oscillation frequencies of 13 and 6 GHz at 25 degrees C and 100 degrees C, respectively. A 10-km single-mode fiber error-free transmission was successfully obtained at a temperature of 85 degrees C.