Continuous-Wave Electrically Pumped 1.55-μm Edge-Emitting Platelet Ridge Laser Diodes on Silicon

We report the successful integration on silicon of small footprint, low-threshold electrically pumped edge-emitting lasers by a new approach incorporating microcleaving technology to produce 6-mu m-thick platelet lasers with cleaved facets, microscale pick. and place assembly to position them on the substrate, and diaphragm pressure solder bonding to attach/connect them permanently in place. InP-based ridge-waveguide platelet lasers integrated on silicon lase at 1550-nm continuous-wave to 55 degrees C (pulsed to 80 degrees C) with output powers as high as 26.8 mW, external differential quantum efficiencies as high as 81%, and threshold currents as low as 18 mA.