4.5 Article

Crosstalk Reduction in a Shallow-Etched Silicon Nanowire AWG

期刊

IEEE PHOTONICS TECHNOLOGY LETTERS
卷 20, 期 17-20, 页码 1615-1617

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2008.2002731

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Arrayed-waveguide grating (AWG); crosstalk; silicon nanowire; silicon-on-insulator technology

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We introduced shallow-etched silicon nanowire into the arrayed waveguides to decrease the random phase error due to the core width fluctuation. A fairly improved crosstalk value of 18 dB was achieved in the fabricated arrayed-waveguide grating with the on-chip loss of 3 dB.

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