期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 48, 期 1, 页码 329-338出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2012.2219685
关键词
Burst video capturing; continuous video capturing; high-speed CMOS image sensor
A 400(H) x 256(V) pixels global-shutter high-speed CMOS image sensor including 128 on-chip memories/pixel has been fabricated in a 0.18-mu m 2P4M CMOS with pinned photodiode process. The key technologies of this image sensor are as follows: multiple on-chip memories for each pixel, spatial separation of pixel and on-chip memory regions, multiple pixel output wires for each column, in-pixel noise reduction circuits, in-pixel source-follower current-sources and flexibly selectable on-chip memories. This CMOS image sensor achieves 1 Tpixel/s burst video operation, a full resolution of 10 Mfps with 128 frames and a half resolution of 20 Mfps with 256 frames, and 780 Mpixel/s continuous video operation on the same chip. The power consumption at 1 Tpixel/s was 24 W, while the image sensor operates without active cooling.
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