期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 45, 期 12, 页码 2591-2601出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2010.2076610
关键词
CMOS analog integrated circuits; sigma-delta modulation; smart sensors; temperature sensors
资金
- European Commission [TRANDSSAT-2005-020461]
An NPN-based temperature sensor with digital output has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of +/-0.5 degrees C (3 sigma) and a trimmed inaccuracy of +/-0.2 degrees C (3 sigma) over the temperature range from -70 degrees C to 125 degrees C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e., correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 mu A from a 1.2-V supply and occupies an area of 0.1 mm(2).
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