A 1.2-V 10-μW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From -70 °C to 125 °C

An NPN-based temperature sensor with digital output has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of +/-0.5 degrees C (3 sigma) and a trimmed inaccuracy of +/-0.2 degrees C (3 sigma) over the temperature range from -70 degrees C to 125 degrees C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e., correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 mu A from a 1.2-V supply and occupies an area of 0.1 mm(2).