期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 44, 期 6, 页码 1796-1804出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2009.2020195
关键词
Comparator-controlled switches; implants; rectifier; transcutaneous power transmission; unbalanced-biasing scheme
资金
- National Institute of Health (NIH) [NIH-NIDCD-N01-DC-6-0002]
- UTD-UT Southwestern Medical Center Joint Research Program
This paper presents an efficiency-enhanced integrated full-wave CMOS rectifier for the transcutaneous power transmission in high-current biomedical implants. The comparator-controlled switches are developed to minimize the voltage drop along the conducting path while achieving the unidirectional current flow. The proposed unbalanced-biasing scheme also minimizes the reverse leakage current of the rectifier under different input amplitudes, thereby optimizing the rectifier power efficiency. Moreover, the proposed rectifier is able to self start and operates at low input amplitudes. Implemented in a standard 0.35 mu m CMOS process with maximum threshold voltages of vertical bar V-thp vertical bar = 0.82 V and V-thn = 0.69 V, the rectifier can source a maximum output current of 20 mA and operate properly with inputs of different amplitudes and frequencies. With a 1.5 MHz input of 1.2 V amplitude, the proposed rectifier can achieve the peak voltage conversion ratio of 95 % and the power efficiency of at least 82%.
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