期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 44, 期 9, 页码 2312-2321出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2009.2024102
关键词
BiCMOS integrated circuits technology; heterojunction bipolar transistor (HBT); integrated circuit fabrication; millimeter wave technology; Silicon Germanium (SiGe)
This paper presents a complete 0.13 mu m SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz f(T)/f(MAX)) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF/mu m(2) high-linearity MIM capacitor and complementary double gate oxide MOS transistors. Details are given on HBT integration, reliability and models as well as on back-end devices models.
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