期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 43, 期 5, 页码 1287-1302出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2008.920318
关键词
far field; floating gate; high efficiency; interface circuit; micro power; passively powered; power conversion; RF powered; rectifier; sensor network
An RF-DC power conversion system is designed to efficiently convert far-field RF energy to DC voltages at very low received power and voltages. Passive rectifier circuits are designed in a 0.25 mu m CMOS technology using floating gate transistors as rectifying diodes. The 36-stage rectifier can rectify input voltages as low as 50 mV with a voltage gain of 6.4 and operates with received power as low as 5.5 mu W (-22.6 dBm). Optimized for far field, the circuit operates at a distance of 44 m from a 4 W EIRP source. The high voltage range achieved at low load current make it ideal for use in passively powered sensor networks.
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