A 70 nm 16 Gb 16-level-cell NAND flash memory

A 16 Gb 16-level-cell (16LC) NAND Hash memory using 70 nm Design Rule has been developed [1]. This 16LC NAND Hash memory can store 4 bits in a cell which enabled double bit density comparing to 4-level-cell (4LC) NAND flash, and quadruple bit density comparing to single-bit (SLC) NAND flash memory with the same design rule. New programming method suppresses the floating gate coupling effect and enabled the narrow V-th distribution for 16LC. The cache-program function can be achievable without any additional latches. Optimization of programming sequence achieves 0.62 MB/s programming throughput. This 16-level NAND flash memory technology reduces the cost per bit and improves the memory density even more.