4.6 Article Proceedings Paper

A 3 μW CMOS true random number generator with adaptive floating-gate offset cancellation

期刊

IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 43, 期 5, 页码 1324-1336

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2008.920327

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cryptography; floating gates; noise; random number generator (RNG); wireless sensor networks

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This paper presents two novel hardware random number generators (RNGs) based on latch metastability. We designed the first, the DC-nulling RNG, for extremely low power operation. The second, the FIR-based RNG, uses a predictive whitening filter to remove nonrandom components from the generated bit sequence. In both designs, the use of floating-gate memory cells allows us to predict and compensate for DC offsets and other nonrandom influences while minimizing power consumption. We also present an efficient digital post-processing technique for improving randomness. We fabricated both RNGs in a standard 0.35 mu m CMOS process. The DC-nulling RNG occupied .031 mm(2) of die area, while the FIR-based RNG occupied 1.49 mm(2).

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