期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 20, 期 6, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2014.2321278
关键词
Selective growth; buffer; dislocation; antiphase boundary; photodetector (PD); integration
资金
- Research Grants Council [614312, 614813]
- Innovation and Technology Commission of Hong Kong Special Administrative Government [ITP/015/09NP]
We report selective-area growth of high-crystalline-quality InGaAs-based photodetectors with optimized InP/GaAs buffers on patterned (100)-oriented silicon-on-insulator (SOI) substrates by metal-organic chemical vapor deposition. The composite GaAs and InP buffer was grown using a two-temperature method. The island morphology of the low-temperature GaAs nucleation layer inside the growth well of the SOI substrate was optimized. A medium temperature GaAs layer was inserted prior to the typical high-temperature GaAs to further decrease the dislocation densities and antiphase boundaries. Both normal-incidence photodetectors and butt-coupled waveguide photodetectors were fabricated on the same substrate and showed a low dark current and highspeed performance. This result demonstrates a good potential of integrating photonic and electronic devices on the same Si substrate by direct epitaxial growth.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据